2SJ567 2002-08-12 1 toshiba field effect transistor silicon p channel mos type ( -mosv) 2SJ567 switching applications chopper regulator, dc-dc converter and motor drive applications low drain-source on resistance: r ds (on) = 1.6 ? (typ.) high forward transfer admittance: |y fs | = 2.0 s (typ.) low leakage current: i dss = ? 100 a (max) (v ds = ? 200 v) enhancement-model: v th = ? 1.5 ~ ? 3.5 v (v ds = ? 10 v, i d = ? 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 200 v drain-gate voltage (r gs 20 k ) v dgr 200 v gate-source voltage v gss 20 v dc (note 1) i d 2.5 drain current pulse (note 1) i dp 10 a drain power dissipation (tc 25c) p d 20 w single pulse avalanche energy (note 2) e as 97.5 mj avalanche current i ar 2.5 a repetitive avalanche energy (note 3) e ar 2.0 mj channel temperature t ch 150 c storage temperature range t stg 55~150 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 6.25 c/w thermal resistance, channel to ambient r th (ch-a) 125 c/w note 1: please use devices on condition that the channel temperature is below 150c. note 2: v dd 50 v, tch 25c (initial), l 25.2 mh, i ar 2.5 a r g 25 , note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. industrial applications unit: mm jedec D jeita sc-64 toshiba 2-7b1b weight: 0.36 g (typ.) jedec D jeita sc-64 toshiba 2-7j1b weight: 0.36 g (typ.)
2SJ567 2002-08-12 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 16 v, v ds 0 v 10 a drain cut-off current i dss v ds 200 v, v gs 0 v 100 a drain-source breakdown voltage v (br) dss i d 10 ma, v gs 0 v 200 v gate threshold voltage v th v ds 10 v, i d 1 ma 1.5 3.5 v drain-source on resistance r ds (on) v gs 10 v, i d 1.5 a 1.6 2.0 forward transfer admittance y fs v ds 10 v, i d 1.5 a 1.0 2.0 s input capacitance c iss 410 reverse transfer capacitance c rss 40 output capacitance c oss v ds 10 v, v gs 0 v, f 1 mhz 145 pf rise time t r 20 turn-on time t on 45 fall time t f 15 switching time turn-off time t off 85 ns total gate charge (gate source plus gate-drain) q g 10 gate-source charge q gs 6 gate-drain (?miller?) charge q gd v dd 160 v, v gs 10 v, i d 2.5 a 4 nc source-drain ratings and characteristics (ta 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr 2.5 a pulse drain reverse current (note 1) i drp 10 a forward voltage (diode) v dsf i dr 2.5 a, v gs 0 v 2.0 v reverse recovery time t rr 135 ns reverse recovery charge q rr i dr 2.5 a, v gs 0 v, di dr /dt 100 a/ s 0.81 c marking type j567 lot number month (starting from alphabet a) year (last number of the christian era) duty
1%, t w 10 s 10 v 0 v v gs r l 66.7 v dd 100 v i d 1.5 a v out 50
2SJ567 2002-08-12 3 forward transfer admittance y fs (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) y fs ? i d drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ) 0 0 1 2 3 4 5 0.4 0.8 1.2 1.6 2.0 common source tc 25c pulse test v gs 4 v 4.2 4.4 4.6 4.8 5 6 8 10 15 0 0 10 20 30 40 50 1 2 3 4 5 common source tc 25c, pulse test v gs 4 v 4.2 4.4 4.6 4.8 5 5.25 5.5 5.75 6 10 15 8 0 0 2 4 6 8 10 2 4 6 8 10 common source v ds 10 v pulse test tc 55c 25 100 0 0 4 8 12 16 20 2 4 6 8 10 common source tc 25c pulse test i d 2.5 a 1.5 0.8 0.1 0.1 1 10 1 10 tc 55c common source v ds 10 v pulse test 25 100 0.1 0.1 1 10 1 10 v gs 10 v common source tc 25c pulse test 15
2SJ567 2002-08-12 4 drain power dissipation p d (w) gate threshold voltage v th (v) case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc case temperature tc (c) p d ? tc gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 0 80 40 0 40 80 120 160 1 2 3 4 5 6 common source v gs 10 v pulse test i d 1.5 a 1.2 1.0 0.1 0 1 10 0.2 0.4 0.6 0.8 1 common source tc 25c pulse test v gs 0 v 1 3 5 1 0.1 1 10 100 10 100 1000 c iss c oss c rss common source v gs 0 v f 1 mhz tc 25c 0 80 40 0 40 80 120 160 1 2 3 4 5 common source v ds 10 v i d 1 ma pulse test 0 0 40 80 120 160 10 20 30 40 4 0 0 4 8 12 16 20 8 12 16 40 80 120 160 common source i d 2.5 a tc 25c pulse test v ds 40 v 80 180 v gs v ds
2SJ567 2002-08-12 5 pulse width t w (s) r th ? t w normalized transient thermal impedance r th (t) /r th (ch-c) drain-source voltage v ds (v) safe operating area drain current i d (a) 0.001 10 100 1 m 10 m 100 m 1 10 100 0.003 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1 3 t p dm t duty t/t r th (ch-c) 6.25c/w duty 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i d max (pulse) * dc operation 100 s * 1 ms * v dss max 0.005 0.1 0.3 1 3 10 30 100 300 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 30 * single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. avalanche energy e as (mj) channel temperature t ch (c) e as ? t ch 0 25 20 40 60 100 80 50 75 100 125 150 15 v 15 v test circuit waveform i ar b vdss v dd v ds r g 25 v dd 50 v, l 25.2 mh v dd b vdss b vdss 2 i l 2 1 as
2SJ567 2002-08-12 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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